Systematic errors in dislocation densities measured by thin film electron microscopy
- 1 July 1966
- journal article
- other
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 14 (127), 185-187
- https://doi.org/10.1080/14786436608219000
Abstract
The dislocation density N m measured by the thin film electron microscope technique may be considerably below the true bulk density N. Lower limits ranging from 2ċ4 to 6 have been reported for K=N/N m for heavily deformed Al. Measurements of electrical resistivity, flow stress and N m are used to show that K for Al extended up to 13% has the value unity, compared with 6 for Al compressed 75%.Keywords
This publication has 8 references indexed in Scilit:
- An experimental determination of electrical resistivity of dislocations in aluminiumPhilosophical Magazine, 1966
- The effect of thickness on the distribution of dislocations in cold-rolled aluminiumPhilosophical Magazine, 1964
- The plasticity of pure single crystalsAdvances in Physics, 1964
- The method of neutral pseudo-atoms in the theory of metalsAdvances in Physics, 1964
- On the loss of dislocations during the preparation of a thin filmPhilosophical Magazine, 1962
- Nuclear magnetic resonance, stored energy, and the density of dislocations in deformed aluminiumPhilosophical Magazine, 1962
- Stored energy and flow stress in deformed metalsPhilosophical Magazine, 1961
- Stored energy and electrical resistivity in deformed metalsPhilosophical Magazine, 1961