Liquid-phase-epitaxy homostructure Pb0.85Sn0.15Te diode laser with controlled carrier concentration
- 1 July 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (1), 7-9
- https://doi.org/10.1063/1.91710
Abstract
Homostructure Pb0.85Sn0.15Te diode lasers were fabricated from a liquid‐phase‐epitaxy grown n+ ‐p‐p+ layer structure. Pulsed threshold currents as low as 40 A/cm2 at 17 °K and 1.5 kA/cm2 at 77 °K were measured. High external and internal quantum efficiencies of 17 and 34%, respectively, were found at 40 °K. No degradation of the threshold current was detected after fifteen thermal cycles.Keywords
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