Das Wachstum von Galliumarsenid-Kristallen nach dem VLS-Mechanismus
- 1 October 1971
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 11 (1), 11-20
- https://doi.org/10.1016/0022-0248(71)90156-4
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Dendritisches Wachstum beim Gastransport halbleitender StoffeCrystal Research and Technology, 1968
- Ohmic Contacts to GaAs by a Simple Low Temperature Alloying ProcessJournal of the Electrochemical Society, 1967
- Whisker Crystals of Gallium Arsenide and Gallium Phosphide Grown by the Vapor—Liquid—Solid MechanismJournal of Applied Physics, 1965
- Epitaxial Growth of Doped and Pure GaAs in an Open Flow SystemJournal of the Electrochemical Society, 1965
- VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTHApplied Physics Letters, 1964
- Crystal Habits of GaAs and GaP Grown from the Vapor PhaseJournal of Applied Physics, 1962
- X-Ray Studies of Twinned GaAs Blades Grown from the Vapor PhaseJournal of the Electrochemical Society, 1962
- Vapor Phase Growth of Gallium Arsenide CrystalsJournal of the Electrochemical Society, 1961
- The growth of crystals and the equilibrium structure of their surfacesPhilosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1951
- The influence of dislocations on crystal growthDiscussions of the Faraday Society, 1949