Room-temperature continuous-wave vertical-cavity surface-emitting GaAs injection lasers

Abstract
Room‐temperature continuous‐wave oscillation with an emission power in excess of 1 mW was achieved in vertical‐cavity surface‐emitting lasers containing a 0.5‐μm‐thick GaAs active layer sandwiched between a distributed Bragg reflector (DBR) and a hybrid metal DBR. The devices have a cw threshold current of 40 mA in 15‐μm‐diam size and a T0 of 115 K. Fiber butt coupling and pseudorandom data modulation of these lasers with open eyes up to 500 Mbit/s were demonstrated.