High-power vertical-cavity surface-emitting AlGaAs/GaAs diode lasers
- 15 May 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (20), 1959-1961
- https://doi.org/10.1063/1.101184
Abstract
Vertical‐cavity surface emitters with rear mirrors made of conductive semiconductor stack reflectors (Rr =98%) were developed. Current confinement is obtained via an etch and regrowth technique with no need for dielectrics. Peak powers of 120 mW were achieved at room temperature. The external differential quantum efficiency is 15%.Keywords
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