Hydrogen passivation of dislocations in silicon
- 15 November 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (10), 1135-1137
- https://doi.org/10.1063/1.95045
Abstract
The electron beam induced current method has been used to show that the principal defects passivated by hydrogen in silicon ribbon grown by the edge-defined film-fed growth technique are, in fact, dislocations. Hydrogen diffusivity for dislocation arrays has been determined to be ≥10−8 cm2/s. It is shown that deep, intragranular passivation depths of up to 250 μm can occur by hydrogen diffusion along dislocation arrays. A model is proposed wherein grain boundary passivation is viewed as a special case of dislocation passivation.Keywords
This publication has 10 references indexed in Scilit:
- Hydrogen diffusion along passivated grain boundaries in silicon ribbonApplied Physics Letters, 1984
- Material Processing with Broad-Beam Ion SourcesAnnual Review of Materials Science, 1983
- Palladium- and platinum-related levels in silicon: Effect of a hydrogen plasmaJournal of Applied Physics, 1983
- Hydrogen passivation of defects in silicon ribbon grown by the edge-defined film-fed growth processApplied Physics Letters, 1983
- Hydrogen Passivation of Laser-Induced Acceptor Defects in p-Type SiliconPhysica Status Solidi (a), 1982
- Deuterium passivation of grain-boundary dangling bonds in silicon thin filmsApplied Physics Letters, 1982
- Passivation of grain boundaries in siliconJournal of Vacuum Science and Technology, 1982
- Hydrogen passivation of defects in deformed siliconPhysica Status Solidi (a), 1981
- Structural and electrical charaterization of crystallographic defects in silicon ribbonsJournal of Crystal Growth, 1980
- Hydrogen passivation of point defects in siliconApplied Physics Letters, 1980