Hydrogen diffusion along passivated grain boundaries in silicon ribbon

Abstract

Using the electron beam induced current mode of the scanning electron microscope, a technique has been developed to study the extent of hydrogen passivation and diffusion along grain boundaries in silicon ribbon grown by the edge-defined film-fed growth process. Passivation and diffusion depths x, ranging from a few microns to more than 200 microns have been found. Grain boundary diffusivities of 10−8–10−9 cm2/s have been measured. A finite width to the spatial distribution of recombination centers along the grain boundaries has been found and measurements of the surface recombination velocity S, indicate that, for S≥2×104 cm/s, ln S∝x.