Low-temperature interdiffusion between aluminum thin films and GaAs
- 1 September 1976
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (9), 4217-4219
- https://doi.org/10.1063/1.323294
Abstract
Al‐GaAs interdiffusion at temperatures between 250 and 450 °C has been studied using Auger electron spectroscopy. Ga has been observed to migrate through 2000‐Å Al films at 250 °C and 24 h vacuum anneal. Schottky barrier height φB increases approximately 0.10 eV as a result of annealing at 250 °C. However, φB remains constant between 250 and 450 °C.Keywords
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