The mechanism of r.f. spike burn-out in Schottky barrier microwave mixers
- 30 April 1975
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 18 (4), 343-346
- https://doi.org/10.1016/0038-1101(75)90089-1
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Semiconductor Device Degradation by High Amplitude Current PulsesIEEE Transactions on Nuclear Science, 1972
- Adaptation of the P-N Junction Burnout Model to Circuit Analysis CodesIEEE Transactions on Nuclear Science, 1972