$\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric
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- 2 March 2012
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 33 (4), 546-548
- https://doi.org/10.1109/led.2012.2184520
Abstract
We demonstrate atomic-layer-deposited (ALD) high-k dielectric integration on 2-D layer-structured molybdenum disulfide (MoS2) crystals and MoS2 dual-gate n-channel MOSFETs with ALD Al2O3 as the gate dielectric. Our C- V study of MOSFET structures shows good interface between 2-D MoS2 crystal and ALD Al2O3. Maximum drain currents using back gates and top gates are measured to be 7.07 and 6.42 mA/mm, respectively, at Vds = 2 V with a channel width of 3 μm, a channel length of 9 μm, and a top-gate length of 3 μm. We achieve the highest field-effect mobility of electrons using back-gate control to be 517 cm2/V·s. The highest current on/off ratio is over 108.Keywords
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