Growth of In1−xGaxSb and In1−xAlxSb films by mulsti target R.F. sputtering
- 1 February 1976
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 32 (1), 51-54
- https://doi.org/10.1016/0040-6090(76)90553-8
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- PbxSn1−xTe layers by rf multicathode sputteringJournal of Applied Physics, 1974
- Epitaxial Growth of III-V Compounds for Electroluminescent Light SourcesIEEE Transactions on Parts, Hybrids, and Packaging, 1973
- Sputtering of CdxHg1−xTe films in mercury vapour plasmaThin Solid Films, 1972
- GaAs, GaP, and GaAs[sub x]P[sub 1−x] Epitaxial Films Grown by Molecular Beam DepositionJournal of Vacuum Science and Technology, 1969
- Optical Properties of Multisource Thermally Evaporated III–V Semiconductor CompoundsApplied Optics, 1966