Epitaxial Growth of III-V Compounds for Electroluminescent Light Sources
- 1 December 1973
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Parts, Hybrids, and Packaging
- Vol. 9 (4), 208-215
- https://doi.org/10.1109/tphp.1973.1136738
Abstract
During the past decade, semiconductor junction electroluminescence has evolved from a laboratory phenomenon to a manufacturing technology. This success can be attributed to the extensive research in the preparation and characterization of III-V compounds. Materials emitting radiation in various regions of the visible spectrum are now available. The epitaxial growth techniques used in the fabrication of III-V compound electroluminescent devices are reviewed. Both vapor and liquid phase epitaxial techniques are discussed, including the applications of these techniques to well established materials as well as newer materials. The state of the art of light-emitting devices fabricated from members of the III-V compounds and their solid solutions is also reviewed.Keywords
This publication has 73 references indexed in Scilit:
- Violet luminescence of Mg-doped GaNApplied Physics Letters, 1973
- GaN yellow-light emitting diodesJournal of Luminescence, 1973
- GaN blue light-emitting diodesJournal of Luminescence, 1972
- The preparation and properties of vapor-grown In1−xGax PMetallurgical Transactions, 1971
- Growth of In[sub (1−x)]Ga[sub x]P p-n Junctions by Liquid Phase EpitaxyJournal of the Electrochemical Society, 1971
- BAND STRUCTURE AND DIRECT TRANSITION ELECTROLUMINESCENCE IN THE In1−xGaxP ALLOYSApplied Physics Letters, 1968
- Electroluminescence in AlxGa1−xP Diodes Prepared by Liquid-Phase EpitaxyJournal of Applied Physics, 1968
- Efficient Green Electroluminescence from GaP p-n Junctions Grown by Liquid-Phase EpitaxyJournal of Applied Physics, 1968
- Preparation of Efficient Electroluminescent Diodes from p-on-n Liquid-Phase Epitaxial Layers of GaPJournal of Applied Physics, 1968
- Formation of Built-in Light-emitting Junctions in Solution-grown GaP Containing Shallow Donors and AcceptorsIBM Journal of Research and Development, 1966