Trap-assisted charge injection in MNOS structures
- 1 October 1973
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (10), 4657-4663
- https://doi.org/10.1063/1.1662016
Abstract
Injection of charge carriers into the nitride in an MNOS structure by direct tunneling to traps in the nitride is studied in this paper. It is shown that this injection mechanism is very important for MNOS structures with thin oxides at low nitride fields (1–4 MV/cm). The dependence on field, temperature, and oxide thickness of this injection current are examined both theoretically and experimentally. It is furthermore proposed that this mechanism may be of considerable importance for charge transport in most insulators.Keywords
This publication has 10 references indexed in Scilit:
- Tunneling to traps in insulatorsJournal of Applied Physics, 1972
- MNOS memory transistors in simple memory arraysIEEE Journal of Solid-State Circuits, 1972
- Properties of MNOS structuresIEEE Transactions on Electron Devices, 1972
- A Method for the Determination of High-Field Conduction Laws in Insulating Films in the Presence of Charge TrappingJournal of Applied Physics, 1972
- Quantum mechanical calculation of the carrier distribution and the thickness of the inversion layer of a MOS field-effect transistorSolid-State Electronics, 1970
- Charge Transport and Storage in Metal-Nitride-Oxide-Silicon (MNOS) StructuresJournal of Applied Physics, 1969
- CHARGE STORAGE MODEL FOR VARIABLE THRESHOLD FET MEMORY ELEMENTApplied Physics Letters, 1969
- Fowler-Nordheim Tunneling into Thermally Grown SiO2Journal of Applied Physics, 1969
- Trapping levels in silicon nitrideElectronics Letters, 1968
- Current Transport and Maximum Dielectric Strength of Silicon Nitride FilmsJournal of Applied Physics, 1967