Tellurium-based II-VI compound semiconductors and heterostructures under strain
- 1 June 1991
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 6 (6), 428-438
- https://doi.org/10.1088/0268-1242/6/6/003
Abstract
Reviews work on some of the electronic and structural properties of CdTe-(CdZn)Te and CdTe-(CdMn)Te strained-layer quantum wells and superlattices under high pressure. The hydrostatic pressure dependence of the band gap of CdTe is deduced to be Eg=Ego+76P (meV GPa-1)-4P2(meV GPa-2) consistent with all the available data, and for ZnTe is Eg=Ego+105P-2P2. Results obtained by piezomodulation of the subband structure of such systems are also presented. The authors determine the values of the CdTe shear deformation potentials: b=-1.17 eV and d=-3.20 eV.Keywords
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