Field effect measurement on the film-substrate and film-vacuum interfaces of a-Si:H
- 15 September 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (6), 572-573
- https://doi.org/10.1063/1.91788
Abstract
Field effect experiments on a‐Si:H films at the bottom (film‐substrate interface) and the top (film‐vacuum interface) of the film are reported. Because of the presence of an absorbate at the top surface, the field effect at the top is found to be much smaller than at the bottom. After a heat treatment at 175 °C for two to four hours, the field effect at the top and the bottom are found to be similar.Keywords
This publication has 12 references indexed in Scilit:
- Thickness dependent conductivity of n-type hydrogenated amorphous siliconJournal of Non-Crystalline Solids, 1980
- Determination of the density of states of a-Si:H using the field effectJournal of Non-Crystalline Solids, 1980
- Effect of adsorbates and insulating layers on the conductance of plasma deposited a-Si:HJournal of Non-Crystalline Solids, 1980
- Photoemission studies on in situ prepared hydrogenated amorphous silicon filmsPhilosophical Magazine Part B, 1979
- The Fermi level position in doped amorphous siliconJournal of Physics C: Solid State Physics, 1979
- Field effect and thermoelectric power on arsenic-doped amorphous siliconJournal of Electronic Materials, 1979
- Influence of interface charges on transport measurements in amorphous silicon filmsJournal de Physique, 1978
- Surface states and barrier heights of metal-amorphous silicon schottky barriersSolid State Communications, 1977
- Investigation of the density of localized states in a-Si using the field effect techniqueJournal of Non-Crystalline Solids, 1976
- Substitutional doping of amorphous siliconSolid State Communications, 1975