First-order optical and intervalley scattering in semiconductors
- 15 August 1976
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 14 (4), 1605-1609
- https://doi.org/10.1103/physrevb.14.1605
Abstract
The scattering rate and momentum relaxation time for nonpolar optical and intervalley scattering is determined for the case in which the interaction matrix element is of first order in the wave vector of the phonon. This process is expected to be important in many cases in which the zero-order interaction is forbidden by symmetry selection rules. The results are applied to silicon where, for reasonable values of the coupling constants, scattering via first-order coupling is comparable to the weakly coupled value that until now has been improperly assumed for the zero-order low-energy phonon interaction, which is actually forbidden.Keywords
This publication has 16 references indexed in Scilit:
- Intervalley Scattering Selection Rules for Si and GePhysica Status Solidi (b), 1970
- Intervalley-Scattering Selection Rules in III-V SemiconductorsPhysical Review B, 1966
- Space Group Selection Rules: Diamond and Zinc BlendePhysical Review B, 1962
- Selection Rules Connecting Different Points in the Brillouin ZonePhysical Review B, 1961
- Scattering of Conduction Electrons by Lattice Vibrations in SiliconPhysical Review B, 1960
- Electron scattering in InSbJournal of Physics and Chemistry of Solids, 1957
- Scattering of Electrons by Lattice Vibrations in Nonpolar CrystalsPhysical Review B, 1956
- Electric Breakdown in Ionic CrystalsPhysical Review B, 1949
- On the Mobility of Electrons in Pure Non-Polar InsulatorsPhysical Review B, 1948
- Theory of electrical breakdown in ionic crystalsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1937