Ion-implanted PLZT for photoferroelectric image storage and display devices
- 1 January 1980
- journal article
- photoferroelectrics
- Published by Informa UK Limited in Ferroelectrics
- Vol. 27 (1), 131-136
- https://doi.org/10.1080/00150198008226083
Abstract
A substantial increase in photoferroelectric image storage sensitivity has been achieved in ferroelectric-phase PLZT ceramics by implanting protons (H+ ions) into the image storage surfaces. The 10- to 100-fold increase in sensitivity is attributed to increased densities of carrier photoexcitation and trapping centers and to an increase in photon absorption in the near-UV. Preliminary measurements indicate that these effects are primarily caused by implantation-produced disorder.Keywords
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