Critical thickness of common-anion II–VI strained layer superlattices (SLSs)
- 2 February 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 117 (1-4), 492-496
- https://doi.org/10.1016/0022-0248(92)90799-o
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Interdiffusion in wide-bandgap Zn(Cd)S(Se) strained layer superlatticesSemiconductor Science and Technology, 1991
- Growth of CdS/ZnS superlattices at low temperature by atomic layer epitaxyJournal of Crystal Growth, 1990
- Photoluminescence of wide bandgap II–VI superlatticesJournal of Crystal Growth, 1990
- Molecular beam epitaxy of Zn1−xCdxSe epilayers and ZnSe/Zn1−xCdxSe superlatticesApplied Physics Letters, 1990
- Misfit strain relaxation in GexSi1−x/Si heterostructures: The structural stability of buried strained layers and strained-layer superlatticesJournal of Applied Physics, 1990
- Critical thickness in epitaxial CdTe/ZnTeApplied Physics Letters, 1990
- Valence band engineering in strained-layer structuresSemiconductor Science and Technology, 1989
- Properties of CdS-ZnS superlattices prepared by hot wall epitaxyApplied Surface Science, 1988
- Defects in epitaxial multilayersJournal of Crystal Growth, 1975