Interdiffusion in wide-bandgap Zn(Cd)S(Se) strained layer superlattices
- 1 August 1991
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 6 (8), 818-821
- https://doi.org/10.1088/0268-1242/6/8/019
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- The growth of ZnSe / CdSe and ZnS / CdS strained layer superlattices by MOVPEJournal of Crystal Growth, 1990
- Growth of CdS/ZnS superlattices at low temperature by atomic layer epitaxyJournal of Crystal Growth, 1990
- Photoluminescence of wide bandgap II–VI superlatticesJournal of Crystal Growth, 1990
- Molecular beam epitaxy of Zn1−xCdxSe epilayers and ZnSe/Zn1−xCdxSe superlatticesApplied Physics Letters, 1990
- Lasing in a ZnS0.12Se0.88/ZnSe multilayer structure with photopumpingApplied Physics Letters, 1989
- The MOCVD growth without prereaction of ZnSe and ZnS layersJournal of Crystal Growth, 1989
- Properties of CdS-ZnS superlattices prepared by hot wall epitaxyApplied Surface Science, 1988
- Electron beam pumped lasing in ZnSe/ZnSSe superlattice structuresn grown by molecular-beam epitaxyJournal of Applied Physics, 1987
- Quantum confinement and strain effects in ZnSe-ZnSxSe1−x strained-layer superlatticesApplied Physics Letters, 1987
- Optical and electrical properties of PbTe-Pb1−xSnxTe superlattices prepared on KC1 by a HWESurface Science, 1984