Current status and prospects of FET-type ferroelectric memories
- 20 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
In this talk, novel MFSFET (metal-ferroelectric-semiconductor FET) arrays for applying to a single-transistor-cell-type digital memory and to a synaptic connection circuit in an artificial neural network are first introduced. Then, current status of the experimental studies on MF(MI)S (I: insulator) capacitors and FETs is presented and finally prospects of FET-type ferroelectric memory are discussed.Keywords
This publication has 9 references indexed in Scilit:
- Preparation of Bi4Ti3O12 Thin Film on Si(100) Substrate Using Bi2SiO5 Buffer Layer and Its Electric CharacterizationJapanese Journal of Applied Physics, 1998
- Fabrication of PbZrxTi1-xO3 Films on Si Structures Using Y2O3 Buffer LayersJapanese Journal of Applied Physics, 1998
- Memory effects of SrBi2Ta2O9 capacitor on silicon with a silicon nitride bufferIntegrated Ferroelectrics, 1998
- Current status and prospects of mfsfets and related devicesIntegrated Ferroelectrics, 1997
- Nonvolatile memory operations of metal-ferroelectric-insulator-semiconductor (MFIS) FETs using PLZT/STO/Si(100) structuresIEEE Electron Device Letters, 1997
- Proposal of a Single-Transistor-Cell-Type Ferroelectric Memory Using an SOI Structure and Experimental Study on the Interference Problem in the Write OperationJapanese Journal of Applied Physics, 1997
- Characterization of Metal/Ferroelectric/Insulator/Semiconductor Structure with CeO2 Buffer LayerJapanese Journal of Applied Physics, 1995
- Ferroelectric memory FET with Ir/IrO2 electrodesIntegrated Ferroelectrics, 1995
- Proposal of Adaptive-Learning Neuron Circuits with Ferroelectric Analog-Memory WeightsJapanese Journal of Applied Physics, 1993