Comment on "Neutralization of Shallow Acceptor Levels in Silicon by Atomic Hydrogen"
- 20 August 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 53 (8), 855
- https://doi.org/10.1103/physrevlett.53.855
Abstract
DOI: https://doi.org/10.1103/PhysRevLett.53.855Keywords
This publication has 5 references indexed in Scilit:
- Bulk acceptor compensation produced in p-type silicon at near-ambient temperatures by a H2O plasmaApplied Physics Letters, 1984
- Neutralization of Shallow Acceptor Levels in Silicon by Atomic HydrogenPhysical Review Letters, 1983
- Deactivation of the boron acceptor in silicon by hydrogenApplied Physics Letters, 1983
- Studies on the lattice position of boron in silicon†Radiation Effects, 1983
- Hydrogen passivation of gold-related deep levels in siliconPhysical Review B, 1982