Partial separations of extended α and β dislocations in II–VI semiconductors
- 1 March 1986
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 53 (3), 307-320
- https://doi.org/10.1080/01418618608242833
Abstract
The dissociation widths of extended dislocations in CdTe, CdS and ZnTe have been measured using the weak-beam technique of electron microscopy, for α and β dislocations separately. Values of the stacking-fault energies have been determined. The experimental results agree with the modified ionic charge model of dislocations in the II–VI semiconductors, and not with the pure ionic model.Keywords
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