Ohmic contacts to p-type GaN using a Ni/Pt/Au metallization scheme
- 1 November 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 16 (6), 3105-3107
- https://doi.org/10.1116/1.590448
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n-GaNApplied Physics Letters, 1996
- Ohmic contacts to n-type GaN using Pd/Al metallizationJournal of Electronic Materials, 1996
- Very low resistance multilayer Ohmic contact to n-GaNApplied Physics Letters, 1996
- InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity FacetsJapanese Journal of Applied Physics, 1996
- High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well StructuresJapanese Journal of Applied Physics, 1995
- Low resistance ohmic contacts on wide band-gap GaNApplied Physics Letters, 1994
- High electron mobility transistor based on a GaN-AlxGa1−xN heterojunctionApplied Physics Letters, 1993
- Metal contacts to gallium nitrideApplied Physics Letters, 1993
- Metal semiconductor field effect transistor based on single crystal GaNApplied Physics Letters, 1993
- The effects of contact size and non-zero metal resistance on the determination of specific contact resistanceSolid-State Electronics, 1982