Plasma and ablation dynamics in ultrafast laser processing of crystalline silicon
- 21 October 2002
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 92 (9), 4918-4925
- https://doi.org/10.1063/1.1510565
Abstract
Mechanisms of ultrafast (femtosecond) laser-induced ablation on crystalline silicon are investigated by time-resolved pump-and-probe microscopy in normal imaging and shadowgraph arrangements. A one-dimensional model of the energy transport is utilized to predict the carrier temperature and lattice temperature as well as the electron and vapor flux emitted from the surface. The temporal delay between the pump and probe pulses is set by a precision translation stage up to about 500 ps and then extended to the nanosecond regime by an optical fiber assembly. The ejection of material is observed at several picoseconds to tens of nanoseconds after the main (pump) pulse by high-resolution, ultrafast shadowgraphs.Keywords
This publication has 41 references indexed in Scilit:
- Inert gas beam delivery for ultrafast laser micromachining at ambient pressureJournal of Applied Physics, 2001
- Generation of dense electron-hole plasmas in siliconPhysical Review B, 2000
- Far-field and near-field material processing with. femtosecond laser pulsesApplied Physics A, 1999
- GaAs under Intense Ultrafast Excitation: Response of the Dielectric FunctionPhysical Review Letters, 1998
- Laser–solid interaction in the femtosecond time regimeApplied Surface Science, 1997
- Laser ablation and micromachining with ultrashort laser pulsesIEEE Journal of Quantum Electronics, 1997
- Ab initioMolecular Dynamics Simulation of Laser Melting of SiliconPhysical Review Letters, 1996
- Ultrafast electronic disordering during femtosecond laser melting of GaAsPhysical Review Letters, 1991
- Phenomenological model for pisosecond-pulse laser annealing of semiconductorsJournal of Applied Physics, 1984
- Electron-energy distribution in silicon under pulsed-laser excitationPhysical Review B, 1983