Phenomenological model for pisosecond-pulse laser annealing of semiconductors
- 15 June 1984
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (12), 4376-4383
- https://doi.org/10.1063/1.333007
Abstract
A system of three coupled diffusion equations describing the equilibration process in the premelt phase of laser annealing is solved and analyzed for a short pulse—20,30 psec—on a thin (d=150 Å) and thick Si,Ge slabs. We find the carrier temperature to be a very sensitive gauge for the electron‐phonon relaxation time constant τ0. The existing data (Si, λ L =0.533 μm and E L =0.25 J/cm2) are consistent with τ0≂0.4–1.0 psec, and the carrier peak temperature is predicted to be in the range 2000–4300 °K.Keywords
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