The effect of channel hot-carrier stressing on gate-oxide integrity in MOSFETs
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (12), 2253-2258
- https://doi.org/10.1109/16.8800
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
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