Enhanced Glide of Dislocations in GaAs Single Crystals by Electron Beam Irradiation
- 1 March 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (3), L165
- https://doi.org/10.1143/jjap.20.l165
Abstract
Influence of 30 keV electron beam irradiation on the mobility of α-dislocations in n-GaAs has been investigated at temperatures between 290 K and 470 K under a shear stress of 40 MN/m2 using a scanning electron microscope with cathodoluminescence mode. The effect of electron irradiation (0.39 A/m2) is equivalent to a temperature rise of 80–180 K in the testing temperature range, which is not explained by a heating effect of the lattice by the irradiation. The activation energy of the dislocation motion is decreased from 0.95 eV to ~0.24 eV by the irradiation. The effect is explained in terms of recombination-enhanced glide of dislocations.Keywords
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