Model for the generation of positive charge at the Si-SiO2interface based on hot-hole injection from the anode

Abstract

A comprehensive model for the generation of positive charge and fast interface states in metal-oxide-semiconductor structures during electron injection is quantitatively analyzed. According to this model, the injected electrons are accelerated in the ${\mathrm{SiO}}_2$ conduction band by the external electric field. Once they reach the anode-${\mathrm{SiO}}_2$ interface, a significant fraction of them lose their kinetic energy by exciting surface plasma oscillations. The decay of these collective excitations into hot-electron-hole pairs results in the injection of holes into the oxide and their trapping at the Si-${\mathrm{SiO}}_2$ interface. The theoretical predictions agree with the experimental dependence of the phenomenon on anode field, temperature, gate material, and oxide thickness.