Nonrandom doping and elastic scattering of carriers in semiconductors
- 6 March 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (10), 940-942
- https://doi.org/10.1063/1.100814
Abstract
High-density delta doping of semiconductors may result in partial ordering of dopant atoms. Under suitable circumstances, periodic delta doping leads to significant suppression of elastic scattering and a consequent enhancement in charge carrier mobility.Keywords
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