Nonequilibrium electron transport in bipolar devices
- 6 July 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (1), 42-44
- https://doi.org/10.1063/1.98881
Abstract
The dynamics of nonequilibrium electron transport in bipolar devices have been investigated by calculating minority‐carrier elastic and inelastic scattering rates as a function of energy for different majority‐carrier concentrations in typical p‐type III‐V semiconductors. Scattering rates depend on the majority‐carrier concentration and a constraint involving the ratio of electron and heavy‐hole effective mass.Keywords
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