The nature of rod-like defects observed in boron irradiated silicon
- 1 June 1972
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 14 (3-4), 271-273
- https://doi.org/10.1080/00337577208231212
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Radiation-Induced Precipitation in Silicon During High-Voltage Electron Microscope ObservationJournal of Applied Physics, 1971
- On the annealing of damage produced by boron ion implantation of silicon single crystalsRadiation Effects, 1971
- Damage produced by ion mplantation in siliconRadiation Effects, 1970
- The distribution of condensed defect structures formed in annealed boron-implanted siliconProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1969