Low threshold GaInAsP/InP buried-heterostructure lasers with a chemically etched and mass-transported mirror
- 15 May 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (10), 945-947
- https://doi.org/10.1063/1.94606
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- On the Formation of Planar‐Etched Facets in GaInAsP / InP Double HeterostructuresJournal of the Electrochemical Society, 1983
- Short cavity InGaAsP/InP lasers with dielectric mirrorsApplied Physics Letters, 1983
- CW operation of 1.5 μm GaInAsP/InP buried-heterostructure laser with a reactive-ion-etched facetElectronics Letters, 1983
- Etched mirror and groove-coupled GaInAsP/InP laser devices for integrated opticsIEEE Journal of Quantum Electronics, 1982
- AlGaAs lasers with micro-cleaved mirrors suitable for monolithic integrationApplied Physics Letters, 1982
- Monolithic integration of InGaAsP heterostructure lasers and electrooptical devicesIEEE Journal of Quantum Electronics, 1982
- Short-cavity GaAlAs laser by wet chemical etchingElectronics Letters, 1982
- Chemically etched-mirror GaInAsP/InP lasers - ReviewIEEE Journal of Quantum Electronics, 1982
- InGaAsP/InP buried-heterostructure lasers (λ = 1.5 μm) with chemically etched mirrorsJournal of Applied Physics, 1981
- Crystallographic facets chemically etched in GaInAsP/InP for integrated opticsElectronics Letters, 1981