GaAs/AlGaAs multiple-quantum-well vertical optical modulators on glass using the epitaxial lift-off technique
- 15 June 1991
- journal article
- Published by Optica Publishing Group in Optics Letters
- Vol. 16 (12), 916-918
- https://doi.org/10.1364/ol.16.000916
Abstract
A GaAs/Al0.30Ga0.70As multiple-quantum-well vertical optical modulator has been grown on a GaAs substrate using the metal-organic vapor-phase epitaxy technique. This device was removed from the original substrate and placed on a glass carrier by means of epitaxial lift-off (ELO). Photocurrent measurements before and after the ELO show clear exciton absorption peaks and indicate the development of a Fabry–Perot cavity after ELO due to multiple reflections between the front and back of the ELO film. Transmission measurements show a maximal contrast ratio of 2.9 dB and an insertion loss of 2.8 dB at a wavelength of 831 nm.Keywords
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