Electron energy relaxation times in GaAs and InP
- 1 November 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 21 (9), 409-411
- https://doi.org/10.1063/1.1654433
Abstract
The field‐dependent energy relaxation times of electrons in GaAs and InP have been determined from the 34‐GHz complex conductivity measured in the presence of a dc heating field. The values for GaAs and InP are 2.5 and 1.7 psec, respectively, at low fields, but increase rapidly near the bulk‐effect threshold field values. Moreover, the relaxation time for InP is found to be less than that for GaAs at all fields. These results are in qualitative accord with predictions based on velocity‐field measurements.Keywords
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