Formation of thin silicon films using low energy oxygen ion implantation
- 1 April 1991
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 55 (1-4), 555-560
- https://doi.org/10.1016/0168-583x(91)96229-e
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- New trends in SIMOXNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- The role of implantation temperature and dose in the control of the microstructure of SIMOX structuresMicroelectronic Engineering, 1988
- Some properties of thin-film SOI MOSFETsIEEE Circuits and Devices Magazine, 1987
- Improved subthreshold characteristics of n-channel SOI transistorsIEEE Electron Device Letters, 1986