Effects of growth interruption on structure of MBE grown GaAs/AlAs hetero-interfaces studied by x-ray diffraction
- 1 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4), 51-54
- https://doi.org/10.1016/0022-0248(89)90349-7
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Properties of (Al,Ga)As/GaAs heterostructures grown by molecular beam epitaxy with growth interruptionJournal of Crystal Growth, 1987
- Atomistic models of interface structures of GaAs-Al Ga1−As (x = 0.2−1) quantum wells grown by interrupted and uninterrupted MBEJournal of Crystal Growth, 1987
- Improved assessment of structural properties of As/GaAs heterostructures and superlattices by double-crystal x-ray diffractionPhysical Review B, 1986
- Scattering of X-rays from crystal surfacesJournal of Physics C: Solid State Physics, 1985
- One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1985