Quantum galvanomagnetic properties of two-dimensional electron gas in AlxGa1−xAs/GaAs heterojunction FET in strong magnetic fields
- 1 January 1982
- journal article
- Published by Elsevier in Surface Science
- Vol. 113 (1-3), 301-305
- https://doi.org/10.1016/0039-6028(82)90605-7
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Far-infrared cyclotron resonance of two-dimensional electrons in an AlxGa1−xAs/GaAs heterojunctionSurface Science, 1982
- Magnetoconductance Investigations of AlxGa1-xAs/GaAs Heterojunction FET in Strong Magnetic FieldsJapanese Journal of Applied Physics, 1981
- Galvanomagnetic Study of 2-Dimensional Electron Gas in AlxGa1-xAs/GaAs Heterojunction FETJapanese Journal of Applied Physics, 1981
- Evidence for a collective ground state in Si inversion layers in the extreme quantum limitSurface Science, 1980
- A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs HeterojunctionsJapanese Journal of Applied Physics, 1980
- Evidence for Anderson localisation in Landau level tails from the analysis of two-dimensional Shubnikov—de Haas conductivity minimaSolid State Communications, 1977
- Anderson localization in a two dimensional electron system under strong magnetic fieldsSolid State Communications, 1977
- Transverse Magneto-Conductivity of a Two-Dimensional Electron GasJournal of the Physics Society Japan, 1972
- Electron spin resonance in n-type GaAsPhysics Letters, 1963
- Solution of the Field Problem of the Germanium GyratorJournal of Applied Physics, 1954