Galvanomagnetic Study of 2-Dimensional Electron Gas in AlxGa1-xAs/GaAs Heterojunction FET
- 1 June 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (6), L443
- https://doi.org/10.1143/jjap.20.l443
Abstract
Measurements of the Hall and Shubnikov-de Haas effects of a 2-dimensional electron gas in an Al x Ga1-x As/GaAs heterojunction interface have been performed. The electron density and mobility decayed together when the gate voltage was applied. The data of the Hall voltage and the source-drain current as functions of the gate voltage are transformed to magnetoconductances σ x x and σ x y , using Wick's theory to clarify the quantization of the conductance at the Landau level tails.Keywords
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