Influence of barrier inhomogeneities on noise at Schottky contacts
- 19 March 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (12), 1113-1115
- https://doi.org/10.1063/1.102584
Abstract
Electronic properties of Schottky diodes depend sensitively on spatial inhomogeneities of the metal/semiconductor interface. We find that, contrary to previous theories for low-frequency noise, the electronic properties of Schottky contacts cannot be understood if one neglects spatial fluctuations of the Schottky barrier height. Our systematic investigation of several silicide/silicon diodes yields as an empirical law that excess noise increases drastically when the standard deviation σs of the spatial distribution of Schottky barrier heights exceeds the critical threshold value of 2kT.Keywords
This publication has 7 references indexed in Scilit:
- Noise spectroscopy of silicon grain boundariesPhysical Review B, 1988
- Schottky barrier and pn-junctionI/V plots ? Small signal evaluationApplied Physics A, 1988
- Theory and experiments of 1/f noise in Schottky-barrier diodes operating in the thermionic-emission modeIEEE Transactions on Electron Devices, 1988
- Non-Lorentzian Noise at Semiconductor InterfacesPhysical Review Letters, 1985
- Quantum 1/fnoise associated with ionized impurity scattering and electron-phonon scattering in condensed matterAdvances in Physics, 1985
- Quantum approach tonoisePhysical Review A, 1980
- Flicker noise in metal semiconductor Schottky barrier diodes due to multistep tunneling processesIEEE Transactions on Electron Devices, 1971