Two-Stage Epitaxial Growth of GaAs E1 Diodes on Spinel

Abstract

Heteroepitaxial GaAs films were grown on dielectric substrates, sapphire and spinel, by a two‐stage epitaxial process. The nucleation and initial film growth are achieved by a vapor phase‐growth technique. Further film growth and p‐n junctions were obtained by the liquid‐phase epitaxial technique. Mesa diode arrays were successfully fabricated in Te‐ and Zn‐ doped grown layers on spinel. The diode I‐V and L‐V characteristics are similar to those obtained on bulk GaAs and indicate good thermal contact between GaAs and spinel. Electroluminescence peaking near 9000 Å is obtained, the radiation leaving the junction both from the mesa surface and from the opposite side through the spinel. The external quantum efficiency achieved was about 0.1%.