Epitaxial growth of GaAs on insulating substrates using HCl-H2 vapor transport
- 31 August 1970
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 13 (8), 1199-IN6
- https://doi.org/10.1016/0038-1101(70)90130-9
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATESApplied Physics Letters, 1968
- The Substrate Orientation Effect on Impurity Profiles of Epitaxial GaAs FilmsJournal of the Electrochemical Society, 1966
- The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and PhosphineJournal of the Electrochemical Society, 1966
- The preparation of high purity gallium arsenide by vapour phase epitaxial growthSolid-State Electronics, 1965
- Vapor Growth of Gallium ArsenideJournal of the Electrochemical Society, 1961