Chemical beam epitaxy of Ga0.47In0.53As/InP quantum wells and heterostructure devices
- 1 February 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 81 (1-4), 261-269
- https://doi.org/10.1016/0022-0248(87)90402-7
Abstract
No abstract availableKeywords
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