High Mobility GaInAs Thin Layers Grown by Molecular Beam Epitaxy

Abstract

Thin (0.5 µm) GaInAs layers are grown by molecular beam epitaxy on InP substrates with and without AlInAs buffer layers. The best electron mobilities of the layer grown without the buffer are 9700 cm²V^-1s^-1 at room teperature and 55500 cm²V^-1s^-1 at 77K in the dark. The highest mobility of the layer is 61000 cm²V^-1s^-1 at 60 K. Electron mobilities of the layer with the buffer are as high as 11900 cm²V^-1s^-1 at room temperature and 53800 cm²V^-1s^-1 at 77 K in the dark, while 64400 cm²V^-1s^-1 is measured at 77 K under an illumination condition.