Ion beam modification of 6H/15R SiC crystals
- 1 June 1986
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 16 (2-3), 237-243
- https://doi.org/10.1016/0168-583x(86)90019-4
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Mechanical response of single crystal Si to very high fluence H+ implantationNuclear Instruments and Methods in Physics Research, 1983
- Displacement criterion for amorphization of silicon during ion implantationJournal of Applied Physics, 1981
- Depth distribution of energy deposition by ion bombardmentComputer Physics Communications, 1974