Semiconductor internal-reflection-interference laser
- 1 April 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (7), 571-573
- https://doi.org/10.1063/1.93183
Abstract
A semiconductor interferometric laser with built-in index guiding for lateral mode stability is reported. Interference is caused by internal reflection from a small notch in the waveguide channel. Very stable single longitudinal mode and stable lateral mode were observed. The intereference also causes wavelength locking over the ranges of more than 7 °C within which the wavelength changes at a moderate rate of about 0.6 Å/°C.Keywords
This publication has 9 references indexed in Scilit:
- Monolithic two-section GaInAsP/InP active-optical-resonator devices formed by reactive ion etchingApplied Physics Letters, 1981
- GaAs-AlxGa1-xAs strip buried heterostructure lasersIEEE Journal of Quantum Electronics, 1979
- Longitudinal-mode behaviors of mode-stabilized AlxGa1−xAs injection lasersJournal of Applied Physics, 1978
- The bent-guide structure AlGaAs-GaAs semiconductor laserIEEE Journal of Quantum Electronics, 1977
- Large-optical-cavity GaAs- (GaAl)As injection laser with low-loss distributed Bragg reflectorsApplied Physics Letters, 1977
- Channeled-substrate planar structure (AlGa)As injection lasersApplied Physics Letters, 1977
- GaAs-GaAlAs distributed-feedback diode lasers with separate optical and carrier confinementApplied Physics Letters, 1975
- A multi-hetero-AIGaAs laser with integrated twin guideProceedings of the IEEE, 1975
- GaAs–Ga1−xAlxAs buried-heterostructure injection lasersJournal of Applied Physics, 1974