GaAs-GaAlAs distributed-feedback diode lasers with separate optical and carrier confinement
- 1 August 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 27 (3), 145-146
- https://doi.org/10.1063/1.88386
Abstract
Remarkable reduction of the threshold current density is achieved in GaAs‐GaAlAs distributed‐feedback diode lasers by adopting a separate‐confinement heterostructure. The diodes are lased successfully at temperatures up to 340 °K under pulsed operation. The lowest threshold current density is 3 kA/cm2 at 300 °K.Keywords
This publication has 5 references indexed in Scilit:
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- GaAs–Ga1−xAlxAs double-heterostructure distributed-feedback diode lasersApplied Physics Letters, 1974
- Distributed Feedback GaAs Homojunction Injection LaserApplied Optics, 1974
- Distributed-feedback single heterojunction GaAs diode laserApplied Physics Letters, 1974
- Double-heterostructure GaAs distributed-feedback laserApplied Physics Letters, 1974