Dose thresholds for implantation of iron-doped indium phosphide
- 1 May 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (5), 3353-3356
- https://doi.org/10.1063/1.329157
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Thermal degradation of InP and its control in LPE growthJournal of Applied Physics, 1979
- Chromium profiles in semi-insulating GaAs after annealing with a Si3N4 encapsulantApplied Physics Letters, 1979
- Implantation and PH 3 Ambient Annealing of InPJournal of the Electrochemical Society, 1978
- InP growth and propertiesJournal of Electronic Materials, 1978
- Ion-implanted n- and p-type layers in InPApplied Physics Letters, 1977
- Indium PhosphideJournal of the Electrochemical Society, 1973