Ion-implanted n- and p-type layers in InP

Abstract

InP has been doped by implantation with several different ions to yield layers of both n‐ and p‐type conductivity. Se⁺ and Si⁺ were found to be efficient n‐type dopants with activations in excess of 75% for moderate doses (1×10¹⁴ cm⁻² at 400 keV). At doses of 1×10¹⁵ cm⁻², sheet resistivities as low as 15 Ω/⧠ were obtained. Cd⁺, Mg⁺, and Be⁺ were all acceptors, with Mg⁺ yielding a sheet hole concentration as high as 5×10¹³ cm⁻² for a dose of 1×10¹⁴ cm⁻² at 150 keV. Reproducible annealing of implanted samples at temperatures up to 750 °C was accomplished with a pyrolytic phosphosilicate glass (PSG) encapsulation. Implants of Kr⁺ indicate that residual implantation damage is n type.