MIRIRS studies of the growth of Si and Si-Ge alloys from molecular precursors
- 20 September 1993
- journal article
- Published by Elsevier in Surface Science
- Vol. 295 (1-2), 133-142
- https://doi.org/10.1016/0039-6028(93)90189-q
Abstract
No abstract availableKeywords
This publication has 31 references indexed in Scilit:
- Investigation on the growth rate enhancement by Ge during SiGe alloy deposition by chemical vapor depositionApplied Physics Letters, 1992
- H-induced surface restructuring on Si(100): Formation of higher hydridesPhysical Review B, 1991
- The adsorption of hydrogen, digermane, and disilane on Ge(111): a multiple internal reflection infrared spectroscopy studyJournal of Electron Spectroscopy and Related Phenomena, 1990
- Hydrogen adsorption on Si(100)-2×1 surfaces studied by elastic recoil detection analysisPhysical Review B, 1990
- Equilibrium alloy properties by direct simulation: Oscillatory segregation at the Si-Ge(100) 2×1 surfacePhysical Review Letters, 1989
- Thermal and photostimulated reactions on Si2H6-adsorbed Si(100)2×1 surfaces: Mechanisms of Si film growth by atomic-layer epitaxyJournal of Vacuum Science & Technology B, 1989
- Interaction ofwith a Si(111)-77 surfacePhysical Review B, 1989
- Low Temperature Silicon Epitaxy Using Si2 H 6Journal of the Electrochemical Society, 1987
- Si(001) surface studies using high energy ion scatteringNuclear Instruments and Methods, 1980
- Reactions of Germanium Tetrachloride with Lithium Aluminohydrides. Lithium Tri-t-butoxyaluminohydride as an Efficient Reagent for the Preparation of Germane1Journal of the American Chemical Society, 1958