Arsenic stabilization of InP substrates for growth of GaxIn1−xAs layers by molecular beam epitaxy
- 1 August 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (3), 290-292
- https://doi.org/10.1063/1.91910
Abstract
A new method of cleaning InP substrates under molecular beam epitaxy conditions involving heating to ⩾500 °C in an As4 flux (JAs4 ≃1015–1016 cm−2 s−1) is described. Evidence of surface cleanliness, good morphology, ordered surface reconstruction, and integrity of chemical composition at the interface is given. Lattice‐matched layers of Ga0.47In0.53As grown on InP substrates cleaned in this way showed excellent electrical properties: e.g. a room‐temperature mobility μ300=8600 cmPu2 V−1 s−1 at n300 =1016 cm−3.Keywords
This publication has 4 references indexed in Scilit:
- Composition control of GaxIn1−xAs films grown by MBE onto InP substratesApplied Physics Letters, 1980
- Properties of Molecular Beam Epitaxial InxGa1-xAs (x≈0.53) Layers Grown on InP SubstratesJapanese Journal of Applied Physics, 1979
- Surface processes controlling the growth of GaxIn1−xAs and GaxIn1−xP alloy films by MBEJournal of Crystal Growth, 1978
- Stabilization of surfaces of III-V compound crystals by molecular beamsJournal of Physics D: Applied Physics, 1975